Development Internship

As an intern at Dwata Tech, you will have the opportunity to work on a variety of backend development tasks using Node.js. Your day-to-day responsibilities will include assisting in the development of backend applications, working with REST APIs, and integrating with databases such as PostgreSQL. You will also have the chance to learn and contribute to cloud-based deployments on AWS, participate in debugging and resolving backend issues, and document code and technical processes clearly. Collaboration with the frontend and QA teams will be a key aspect of your role. To excel in this internship, you should have a basic knowledge of Node.js and JavaScript, be familiar with REST APIs, and possess an understanding of relational databases, preferably PostgreSQL. A willingness to learn new technologies like Kafka and AWS, along with good communication and problem-solving skills, will be beneficial for your growth in this role. During your internship at Dwata Tech, you will gain valuable real-time development experience working on production-level systems. You will receive guidance from experienced backend developers, and upon successful completion, you will be awarded an internship certificate with the potential for a Pre-Placement Offer (PPO). Additionally, you will be exposed to tools such as Kafka, AWS, and Docker, enhancing your skill set and knowledge in the field. Dwata Tech is a tech-intensive company founded by individuals with over 20 years of combined experience from renowned companies like Google, Motorola, Samsung, and successful start-ups. Our team consists of highly skilled engineers dedicated to product development, utilizing cutting-edge technology in custom product development, data engineering, and cybersecurity. We collaborate with start-ups to provide extended engineering support, catering to clients in Israel, the US, and India. Our team is focused on delivering outcomes, providing you with ample opportunities for learning and exploration during your long-term engagement with us.,